Dual N/P-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay SI5517DU-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
818-1334
Mfr. Part No.:
SI5517DU-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3.7 A, 7.2 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ, 131 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

8.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

1.98mm

Typical Gate Charge @ Vgs

10.5 nC @ 8 V, 9.1 nC @ 8 V

Length

3.08mm

Height

0.85mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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