Dual N/P-Channel MOSFET, 3 A, 3.5 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5513CDC-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
818-1330
Mfr. Part No.:
SI5513CDC-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.5 A

Maximum Drain Source Voltage

20 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

85 mΩ, 255 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2.8 nC @ 5 V, 3.9 nC @ 5 V

Number of Elements per Chip

2

Length

3.1mm

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

COO (Country of Origin):
CN

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