Vishay P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 SI2377EDS-T1-GE3
- RS Stock No.:
 - 812-3145
 - Mfr. Part No.:
 - SI2377EDS-T1-GE3
 - Brand:
 - Vishay
 
Subtotal (1 pack of 20 units)*
£5.30
(exc. VAT)
£6.36
(inc. VAT)
FREE delivery for orders over £50.00
- 6,880 unit(s) ready to ship
 - Plus 999,993,100 unit(s) shipping from 07 April 2026
 
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 20 - 180 | £0.265 | £5.30 | 
| 200 - 480 | £0.202 | £4.04 | 
| 500 - 980 | £0.186 | £3.72 | 
| 1000 - 1980 | £0.159 | £3.18 | 
| 2000 + | £0.138 | £2.76 | 
*price indicative
- RS Stock No.:
 - 812-3145
 - Mfr. Part No.:
 - SI2377EDS-T1-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 165 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 3.5 A  | ||
Maximum Drain Source Voltage 20 V  | ||
Package Type SOT-23  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 165 mΩ  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 0.4V  | ||
Maximum Power Dissipation 1.8 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -8 V, +8 V  | ||
Number of Elements per Chip 1  | ||
Length 3.04mm  | ||
Typical Gate Charge @ Vgs 14 nC @ 8 V  | ||
Maximum Operating Temperature +150 °C  | ||
Transistor Material Si  | ||
Width 1.4mm  | ||
Height 1.02mm  | ||
Minimum Operating Temperature -55 °C  | ||
- COO (Country of Origin):
 - CN
 
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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