P-Channel MOSFET, 1.9 A, 200 V, 3-Pin DPAK Vishay IRFR9210TRPBF
- RS Stock No.:
- 812-0657
- Mfr. Part No.:
- IRFR9210TRPBF
- Brand:
- Vishay
Discontinued
- RS Stock No.:
- 812-0657
- Mfr. Part No.:
- IRFR9210TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.9 nC @ 10 V | |
| Width | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.9 nC @ 10 V | ||
Width 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Repetitive avalanche rated
Fast switching
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