Dual N-Channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO Vishay SQJ960EP-T1_GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
787-9418
Mfr. Part No.:
SQJ960EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

84 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

5.25mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.47mm

Transistor Material

Si

Height

1.14mm

Minimum Operating Temperature

-55 °C

Dual N-Channel MOSFET, Vishay Semiconductor



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