Dual N-Channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO Vishay SQJ960EP-T1_GE3
- RS Stock No.:
- 787-9418
- Mfr. Part No.:
- SQJ960EP-T1_GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 787-9418
- Mfr. Part No.:
- SQJ960EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | PowerPAK SO | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 84 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 34 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 2 | |
Length | 5.25mm | |
Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 4.47mm | |
Transistor Material | Si | |
Height | 1.14mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK SO | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 84 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Length 5.25mm | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.47mm | ||
Transistor Material Si | ||
Height 1.14mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N-Channel MOSFET, Vishay Semiconductor
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