Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
- RS Stock No.:
 - 787-9222
 - Distrelec Article No.:
 - 304-02-277
 - Mfr. Part No.:
 - SI2333DDS-T1-GE3
 - Brand:
 - Vishay
 
Subtotal (1 pack of 10 units)*
£3.30
(exc. VAT)
£4.00
(inc. VAT)
FREE delivery for orders over £50.00
- 480 left, ready to ship
 - Plus 50 left, ready to ship from another location
 - Final 41,620 unit(s) shipping from 11 November 2025
 
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 10 - 90 | £0.33 | £3.30 | 
| 100 - 490 | £0.309 | £3.09 | 
| 500 - 990 | £0.28 | £2.80 | 
| 1000 - 2490 | £0.263 | £2.63 | 
| 2500 + | £0.247 | £2.47 | 
*price indicative
- RS Stock No.:
 - 787-9222
 - Distrelec Article No.:
 - 304-02-277
 - Mfr. Part No.:
 - SI2333DDS-T1-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 19 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 23 nC @ 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 6 A  | ||
Maximum Drain Source Voltage 12 V  | ||
Package Type SOT-23  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 19 Ω  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 0.4V  | ||
Maximum Power Dissipation 1.7 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -8 V, +8 V  | ||
Width 1.4mm  | ||
Number of Elements per Chip 1  | ||
Length 3.04mm  | ||
Typical Gate Charge @ Vgs 23 nC @ 8 V  | ||
Maximum Operating Temperature +150 °C  | ||
Transistor Material Si  | ||
Minimum Operating Temperature -55 °C  | ||
Height 1.02mm  | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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