Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 710-3250P
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Brand:
- Vishay
Subtotal 10 units (supplied on a continuous strip)*
£3.78
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£4.54
(inc. VAT)
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In Stock
- 13,560 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £0.378 |
*price indicative
- RS Stock No.:
- 710-3250P
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | Si2309CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series Si2309CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3
This p‑channel MOSFET is a surface‑mount transistor designed for switching and control tasks in Compact electronic assemblies. It operates as an enhancement‑mode device suitable for low‑ to medium‑current circuits, offering a balance of voltage handling and thermal endurance for industrial applications.
Features and Benefits:
• -60V maximum Vds for high‑voltage switching capability • 1.2A continuous drain current for moderate load handling • 345mΩ Rds(on) for predictable conduction losses • 2.7nC typical gate charge for efficient gate drive • 1.7W power dissipation supporting thermal‑budget planning • -55°C to 150°C operating range for wide‑temperature environments
Applications
• Suitable for load switching in automation control modules • Ideal for power‑rail reverse‑polarity protection circuits • Used with battery management and power distribution boards • Can be used for level‑shifting and small‑signal power stages
What package type is used for Compact board layouts?
It is supplied in a SOT‑23 package configured for three‑pin surface mounting, facilitating dense PCB assembly.
How does the device handle gate drive requirements?
The gate may be driven within a ±20V range relative to source, allowing compatibility with common control voltages while limiting gate stress.
What thermal considerations should I allow for in design?
With maximum power dissipation of 1.7W, board copper and thermal vias should be sized to manage junction temperature under load within the -55°C to 150°C specified range.
Are there environmental or material restrictions to note?
The component conforms to RoHS requirements, indicating restricted hazardous substances are controlled in its manufacture.