Vishay N-Channel MOSFET, 3.3 A, 200 V, 3-Pin TO-220AB IRF610PBF
- RS Stock No.:
 - 543-0046
 - Distrelec Article No.:
 - 171-14-986
 - Mfr. Part No.:
 - IRF610PBF
 - Brand:
 - Vishay
 
Subtotal (1 unit)*
£0.46
(exc. VAT)
£0.55
(inc. VAT)
FREE delivery for orders over £50.00
- 380 unit(s) ready to ship
 - Plus 7 unit(s) ready to ship from another location
 - Plus 595 unit(s) shipping from 11 November 2025
 
Units  | Per unit  | 
|---|---|
| 1 - 9 | £0.46 | 
| 10 - 49 | £0.44 | 
| 50 - 99 | £0.32 | 
| 100 - 249 | £0.30 | 
| 250 + | £0.27 | 
*price indicative
- RS Stock No.:
 - 543-0046
 - Distrelec Article No.:
 - 171-14-986
 - Mfr. Part No.:
 - IRF610PBF
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.3 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 36 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.41mm | |
| Transistor Material | Si | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 3.3 A  | ||
Maximum Drain Source Voltage 200 V  | ||
Package Type TO-220AB  | ||
Mounting Type Through Hole  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 1.5 Ω  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 2V  | ||
Maximum Power Dissipation 36 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Maximum Operating Temperature +150 °C  | ||
Width 4.7mm  | ||
Typical Gate Charge @ Vgs 8.2 nC @ 10 V  | ||
Number of Elements per Chip 1  | ||
Length 10.41mm  | ||
Transistor Material Si  | ||
Height 9.01mm  | ||
Minimum Operating Temperature -55 °C  | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

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