Vishay P-Channel MOSFET, 4 A, 100 V, 3-Pin TO-220AB IRF9510PBF
- RS Stock No.:
- 543-0018P
- Mfr. Part No.:
- IRF9510PBF
- Brand:
- Vishay
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- RS Stock No.:
- 543-0018P
- Mfr. Part No.:
- IRF9510PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 43 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.41mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 8.7 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements
Repetitive avalanche rated
Simple drive requirements
MOSFET Transistors, Vishay Semiconductor