Vishay Type N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-247 IRFP460LCPBF
- RS Stock No.:
- 281-6032
- Distrelec Article No.:
- 171-16-940
- Mfr. Part No.:
- IRFP460LCPBF
- Brand:
- Vishay
Subtotal (1 unit)*
£4.86
(exc. VAT)
£5.83
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 2,777 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | £4.86 |
*price indicative
- RS Stock No.:
- 281-6032
- Distrelec Article No.:
- 171-16-940
- Mfr. Part No.:
- IRFP460LCPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 280W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 14.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 280W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 14.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFETs offer significantly lower gate charges than conventional MOSFETs. These improvements reduce gate drive requirements, speed up switching, and increase system savings, setting a new standard in power transistors for switching applications.
Ultra low gate charge
Reduced gate drive requirement
Isolated central mounting hole
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