SMT N channel MOSFET,IRLML2803 0.91A 30V

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Each (In a Pack of 5)

£0.264

(exc. VAT)

£0.317

(inc. VAT)

RS Stock No.:
217-1053
Mfr. Part No.:
IRLML2803TR
Brand:
International Rectifier
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Brand

International Rectifier

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

540 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Height

1.02mm

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Length

3.04mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Series

HEXFET

Width

1.4mm

Non Compliant

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.