Vishay SiHB068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3

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Subtotal (1 pack of 5 units)*

£28.25

(exc. VAT)

£33.90

(inc. VAT)

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  • Shipping from 09 November 2026
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Units
Per unit
Per Pack*
5 - 20£5.65£28.25
25 - 45£4.802£24.01
50 - 120£4.522£22.61
125 - 245£4.24£21.20
250 +£4.07£20.35

*price indicative

Packaging Options:
RS Stock No.:
204-7244
Mfr. Part No.:
SIHB068N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

41A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHB068N60EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

68mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.06mm

Length

14.61mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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