N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3
- RS Stock No.:
- 200-6859
- Mfr. Part No.:
- SiSS32LDN-T1-GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 200-6859
- Mfr. Part No.:
- SiSS32LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 63 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK 1212-8S | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0072 Ω, 0.0095 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Number of Elements per Chip | 1 | |
| Series | TrenchFET® Gen IV | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK 1212-8S | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0072 Ω, 0.0095 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
Series TrenchFET® Gen IV | ||
The Vishay SiSS32LDN-T1-GE3 is a N-channel 80V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested