Name: N-Channel MOSFET, 16 A, 80 V, 8-Pin PowerPAK 1212 Vishay SIS108DN-T1-GE3
Brand: Vishay
SKU: 188-5114
Price: 0.94 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	16 A
	Maximum Drain Source Voltage	80 V
	Package Type	PowerPAK 1212
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	24 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Width	3.15mm
	Length	3.15mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	9.2 nC @ 10 V
	Number of Elements per Chip	1
	Height	1.07mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 16 A
	Maximum Drain Source Voltage 80 V
	Package Type PowerPAK 1212
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 24 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Width 3.15mm
	Length 3.15mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 9.2 nC @ 10 V
	Number of Elements per Chip 1
	Height 1.07mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

Datasheet SIS108DN-T1-GE3

N-Channel 80 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss FOM

N-Channel MOSFET, 16 A, 80 V, 8-Pin PowerPAK 1212 Vishay SIS108DN-T1-GE3

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