N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S Vishay SISS42LDN-T1-GE3
- RS Stock No.:
- 188-5071
- Mfr. Part No.:
- SISS42LDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.16
(exc. VAT)
£13.39
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.116 | £11.16 |
| 50 - 90 | £1.095 | £10.95 |
| 100 - 490 | £0.857 | £8.57 |
| 500 - 990 | £0.735 | £7.35 |
| 1000 + | £0.58 | £5.80 |
*price indicative
- RS Stock No.:
- 188-5071
- Mfr. Part No.:
- SISS42LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 39 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PowerPAK 1212-S | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 3.3mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.3mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.78mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PowerPAK 1212-S | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 3.3mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 3.3mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.78mm | ||
N-Channel 100 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM