N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH Vishay SiSH114ADN-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
188-5062
Mfr. Part No.:
SiSH114ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.3mm

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Number of Elements per Chip

1

Height

0.93mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

N-Channel 30-V (D-S) MOSFET.

TrenchFET® power MOSFET