N-Channel MOSFET, 12 A, 80 V, 6-Pin PowerPAK SC-70 Vishay SIA108DJ-T1-GE3
- RS Stock No.:
- 188-5002
- Mfr. Part No.:
- SIA108DJ-T1-GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 188-5002
- Mfr. Part No.:
- SIA108DJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PowerPAK SC-70 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 46 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 19 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Width | 2.15mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 9.2 nC @ 10 V | |
Length | 2.15mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 0.75mm | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK SC-70 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 46 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 2.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 9.2 nC @ 10 V | ||
Length 2.15mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss
Tuned for the lowest RDS x Qoss