Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

Stock information currently inaccessible
Packaging Options:
RS Stock No.:
188-4979
Mfr. Part No.:
SIHD186N60EF-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

201 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

6.73mm

Maximum Operating Temperature

+150 °C

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

21 nC @ 10 V

Height

2.25mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

EF Series Power MOSFET With Fast Body Diode.

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy