P-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8SH Vishay SiSH407DN-T1-GE3

Stock information currently inaccessible
RS Stock No.:
188-4894
Mfr. Part No.:
SiSH407DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

3.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

62.5 nC @ 8 V

Length

3.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.93mm

P-Channel 20 V (D-S) MOSFET.

TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package with small size and low 0.9 mm profile

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