N-Channel MOSFET, 38 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SiRA28BDP-T1-GE3

Stock information currently inaccessible
RS Stock No.:
188-4882
Mfr. Part No.:
SiRA28BDP-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

17 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

5mm

Typical Gate Charge @ Vgs

9.3 nC @ 10 V

Number of Elements per Chip

1

Length

5.99mm

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy