Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3
- RS Stock No.:
 - 188-4873
 - Mfr. Part No.:
 - SIHD186N60EF-GE3
 - Brand:
 - Vishay
 
Discontinued
- RS Stock No.:
 - 188-4873
 - Mfr. Part No.:
 - SIHD186N60EF-GE3
 - Brand:
 - Vishay
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 201 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.25mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 19 A  | ||
Maximum Drain Source Voltage 600 V  | ||
Package Type DPAK (TO-252)  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 201 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 5V  | ||
Minimum Gate Threshold Voltage 3V  | ||
Maximum Power Dissipation 156 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage ±30 V  | ||
Width 6.22mm  | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V  | ||
Maximum Operating Temperature +150 °C  | ||
Length 6.73mm  | ||
Number of Elements per Chip 1  | ||
Forward Diode Voltage 1.2V  | ||
Minimum Operating Temperature -55 °C  | ||
Height 2.25mm  | ||
EF Series Power MOSFET With Fast Body Diode.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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