N-Channel MOSFET, 208 A, 45 V, 8-Pin PowerPAK SO Vishay SIDR608DP-T1-RE3

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
188-4869
Mfr. Part No.:
SIDR608DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

208 A

Maximum Drain Source Voltage

45 V

Package Type

PowerPAK SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

111 nC @ 10 V

Length

5.99mm

Forward Diode Voltage

1.1V

Height

1.07mm

Minimum Operating Temperature

-55 °C

N-Channel 45 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
45 V Drain-source break-down voltage
Tuned for low Qg and Qoss