Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 3.7 A, 30 V, 8-Pin 1206 ChipFET SI5504BDC-T1-E3

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Packaging Options:
RS Stock No.:
180-7761
Mfr. Part No.:
SI5504BDC-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A, 3.7 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.1 O,0.235 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

2

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 30V and drain-source resistance of 65mohm at a gate-source voltage of 10V. It has a maximum power rating of 3.1W and 3.12W. The MOSFET has continuous drain currents of 4A and 3.7A. It has been optimized, for lower switching and conduction losses.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• DC/DC for portable devices
• Load switch

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007