Vishay TrenchFET N-Channel MOSFET, 2.9 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1

View all MOSFETs
Discontinued
Packaging Options:
RS Stock No.:
180-7741
Mfr. Part No.:
SI8824EDB-T2-E1
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

MICRO FOOT

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.075 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Number of Elements per Chip

1

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 5V. It has drain-source resistance of 75mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 900mW. The minimum and a maximum driving voltage for this transistor are 1.2V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• Space efficient
• TrenchFET power MOSFET
• Typical ESD protection 2000V (HBM)

Applications


• Load switch for 1.2V, 1.5V, and 1.8V power lines
• Load switch with low voltage drop
• Small signal and high speed switching
• Ultraportable and wearable devices

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007