Vishay TrenchFET N-Channel MOSFET, 2.9 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- RS Stock No.:
- 180-7330
- Mfr. Part No.:
- SI8824EDB-T2-E1
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 180-7330
- Mfr. Part No.:
- SI8824EDB-T2-E1
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.075 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.8V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.075 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.8V | ||
Number of Elements per Chip 1 | ||
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 5V. It has drain-source resistance of 75mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 900mW. The minimum and a maximum driving voltage for this transistor are 1.2V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• Space efficient
• TrenchFET power MOSFET
• Typical ESD protection 2000V (HBM)
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• Space efficient
• TrenchFET power MOSFET
• Typical ESD protection 2000V (HBM)
Applications
• Load switch for 1.2V, 1.5V, and 1.8V power lines
• Load switch with low voltage drop
• Small signal and high speed switching
• Ultraportable and wearable devices
• Load switch with low voltage drop
• Small signal and high speed switching
• Ultraportable and wearable devices
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007