Vishay MOSFET SI7956DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

£3,708.00

(exc. VAT)

£4,449.00

(inc. VAT)

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Per Reel*
3000 +£1.236£3,708.00

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RS Stock No.:
180-7324
Mfr. Part No.:
SI7956DP-T1-GE3
Brand:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Dual MOSFET for space savings
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Half bridge and forward converters
• High efficiency primary side switches

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

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