Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SiRA12BDP-T1-GE3

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

5mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Length

5.99mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.1V