Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 30 V, 8-Pin 1212 SiSS04DN-T1-GE3
- RS Stock No.:
- 178-3908
- Mfr. Part No.:
- SiSS04DN-T1-GE3
- Brand:
- Vishay Siliconix
Stock information currently inaccessible
- RS Stock No.:
- 178-3908
- Mfr. Part No.:
- SiSS04DN-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | TrenchFET | |
| Package Type | 1212 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 65.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.15mm | |
| Typical Gate Charge @ Vgs | 61.5 nC @ 10 V | |
| Length | 3.15mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.07mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 30 V | ||
Series TrenchFET | ||
Package Type 1212 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 65.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 3.15mm | ||
Typical Gate Charge @ Vgs 61.5 nC @ 10 V | ||
Length 3.15mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.07mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss