Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 30 V, 8-Pin 1212 SiSS04DN-T1-GE3
- RS Stock No.:
- 178-3908
- Mfr. Part No.:
- SiSS04DN-T1-GE3
- Brand:
- Vishay Siliconix
- RS Stock No.:
- 178-3908
- Mfr. Part No.:
- SiSS04DN-T1-GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
---|---|---|
Brand | Vishay Siliconix | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | 1212 | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 1 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 65.7 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +16 V | |
Number of Elements per Chip | 1 | |
Width | 3.15mm | |
Transistor Material | Si | |
Length | 3.15mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 61.5 nC @ 10 V | |
Height | 1.07mm | |
Forward Diode Voltage | 1.1V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type 1212 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 65.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 3.15mm | ||
Transistor Material Si | ||
Length 3.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 61.5 nC @ 10 V | ||
Height 1.07mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss