Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

24.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V