Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

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Subtotal (1 pack of 10 units)*

£4.73

(exc. VAT)

£5.68

(inc. VAT)

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Per Pack*
10 - 40£0.473£4.73
50 - 90£0.427£4.27
100 - 490£0.402£4.02
500 - 990£0.378£3.78
1000 +£0.332£3.32

*price indicative

Packaging Options:
RS Stock No.:
178-3901
Mfr. Part No.:
SiA106DJ-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Width

1.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Length

2.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss

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