Vishay Siliconix TrenchFET N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Si7172ADP-T1-RE3

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Packaging Options:
RS Stock No.:
178-3865
Mfr. Part No.:
Si7172ADP-T1-RE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

17.2 A

Maximum Drain Source Voltage

200 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.99mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

19.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Forward Diode Voltage

1.1V

Height

1.07mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN
ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss

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