Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3
- RS Stock No.:
- 178-3704
- Mfr. Part No.:
- SiZF906ADT-T1-GE3
- Brand:
- Vishay Siliconix
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 178-3704
- Mfr. Part No.:
- SiZF906ADT-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 6 x 5F | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 83 W | |
| Maximum Gate Source Voltage | -16 V, +20 V | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 100 (Channel 2) nC @ 10 V, 24.5 (Channel 1) nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Width | 6mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.7mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 30 V | ||
Series TrenchFET | ||
Package Type PowerPAIR 6 x 5F | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 83 W | ||
Maximum Gate Source Voltage -16 V, +20 V | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 100 (Channel 2) nC @ 10 V, 24.5 (Channel 1) nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Width 6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.7mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
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