Name: Vishay P-Channel MOSFET, 1.9 A, 200 V, 3-Pin DPAK IRFR9210TRPBF
Brand: Vishay
SKU: 177-7564
Price: 0.19 GBP
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	P
	Maximum Continuous Drain Current	1.9 A
	Maximum Drain Source Voltage	200 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	3 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	25 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	8.9 nC @ 10 V
	Number of Elements per Chip	1
	Length	6.73mm
	Width	6.22mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Height	2.38mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type P
	Maximum Continuous Drain Current 1.9 A
	Maximum Drain Source Voltage 200 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 3 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 25 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 8.9 nC @ 10 V
	Number of Elements per Chip 1
	Length 6.73mm
	Width 6.22mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Height 2.38mm
	Minimum Operating Temperature -55 °C

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210, Power MOSFET

The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

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