Vishay SQ Rugged N-Channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK 1212 SQS460EN-T1_GE3

Discontinued
RS Stock No.:
170-8305
Mfr. Part No.:
SQS460EN-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212

Series

SQ Rugged

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

1.12mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor