N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay SIB452DK-T1-GE3
- RS Stock No.:
- 165-7264
- Mfr. Part No.:
- SIB452DK-T1-GE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 165-7264
- Mfr. Part No.:
- SIB452DK-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 670 mA | |
| Maximum Drain Source Voltage | 190 V | |
| Package Type | SC-75 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 6 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 13 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 1.7mm | |
| Width | 1.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 4.3 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 670 mA | ||
Maximum Drain Source Voltage 190 V | ||
Package Type SC-75 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 6 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 13 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 1.7mm | ||
Width 1.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 4.3 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
- COO (Country of Origin):
- CN