N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK Vishay SIHB12N60E-GE3

Subtotal (1 tube of 50 units)*

£9.25

(exc. VAT)

£11.10

(inc. VAT)

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Units
Per unit
Per Tube*
50 +£0.185£9.25

*price indicative

RS Stock No.:
145-1818
Mfr. Part No.:
SIHB12N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

147 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.67mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

9.65mm

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Series

E Series

COO (Country of Origin):
CN