STMicroelectronics TN2010H-6G, Thyristor 600V, 12.7A 10mA
- RS Stock No.:
- 192-5040
- Mfr. Part No.:
- TN2010H-6G
- Brand:
- STMicroelectronics
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Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £0.844 | £8.44 |
50 - 90 | £0.793 | £7.93 |
100 - 240 | £0.75 | £7.50 |
250 - 490 | £0.709 | £7.09 |
500 + | £0.676 | £6.76 |
*price indicative
- RS Stock No.:
- 192-5040
- Mfr. Part No.:
- TN2010H-6G
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Rated Average On-State Current | 12.7A | |
Thyristor Type | SCR | |
Package Type | D2PAK | |
Repetitive Peak Reverse Voltage | 600V | |
Surge Current Rating | 180A | |
Mounting Type | Surface Mount | |
Maximum Gate Trigger Current | 10mA | |
Maximum Gate Trigger Voltage | 1.3V | |
Maximum Holding Current | 40mA | |
Pin Count | 3 | |
Dimensions | 10.28 x 9.35 x 4.6mm | |
Minimum Operating Temperature | -40 °C | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Rated Average On-State Current 12.7A | ||
Thyristor Type SCR | ||
Package Type D2PAK | ||
Repetitive Peak Reverse Voltage 600V | ||
Surge Current Rating 180A | ||
Mounting Type Surface Mount | ||
Maximum Gate Trigger Current 10mA | ||
Maximum Gate Trigger Voltage 1.3V | ||
Maximum Holding Current 40mA | ||
Pin Count 3 | ||
Dimensions 10.28 x 9.35 x 4.6mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
This device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. Its D²PAK package allows modern SMD designs as well as compact back to back configuration.The combination of noise immunity and low gate triggering current allows to design strong and compact control circuits.
High junction temperature: Tj = 150 °C
High noise immunity dV/dt = 400 V/μs up to 150 °C
Gate triggering current IGT = 10 mA
Peak off-state voltage VDRM/VRRM = 600 V
High turn on current rise dI/dt = 100 A/μs
High noise immunity dV/dt = 400 V/μs up to 150 °C
Gate triggering current IGT = 10 mA
Peak off-state voltage VDRM/VRRM = 600 V
High turn on current rise dI/dt = 100 A/μs
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