STMicroelectronics, Thyristor 600 V, 10 A 6 mA 153 A
- RS Stock No.:
- 192-4596
- Mfr. Part No.:
- TN1605H-6G
- Brand:
- STMicroelectronics
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- RS Stock No.:
- 192-4596
- Mfr. Part No.:
- TN1605H-6G
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Rated Average On-State Current Irms | 10A | |
| Product Type | Thyristor | |
| Thyristor Type | SCR | |
| Package Type | TO-263 | |
| Repetitive Peak Reverse Voltage VDRM | 600V | |
| Surge Current Rating | 153A | |
| Mount Type | Surface | |
| Maximum Gate Trigger Current Igt | 6mA | |
| Pin Count | 3 | |
| Maximum Holding Current Ih | 20mA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Trigger Voltage Vgt | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | 16 A SCR | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Rated Average On-State Current Irms 10A | ||
Product Type Thyristor | ||
Thyristor Type SCR | ||
Package Type TO-263 | ||
Repetitive Peak Reverse Voltage VDRM 600V | ||
Surge Current Rating 153A | ||
Mount Type Surface | ||
Maximum Gate Trigger Current Igt 6mA | ||
Pin Count 3 | ||
Maximum Holding Current Ih 20mA | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Trigger Voltage Vgt 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series 16 A SCR | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Designed with high immunity switching to external surges, this device offers robust switching up to its 150°C maximum Tj. The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit.
High junction temperature: Tj = 150 °C
Gate triggering current IGT = 6 mA
High noise immunity dV/dt = 200 V/μs up to 150 °C
Blocking voltage VDRM/VRRM = 600 V
High turn-on current rise dI/dt: 100 A/μs
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