onsemi Switching Diode, Single, 23.4 A, 3-Pin 650 V TO-252 FFSD2065B
- RS Stock No.:
- 202-7286
- Mfr. Part No.:
- FFSD2065B
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 202-7286
- Mfr. Part No.:
- FFSD2065B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Diode Configuration | Single | |
| Product Type | Switching Diode | |
| Maximum Forward Current If | 23.4A | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Power Dissipation Pd | 160mW | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 763A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Diode Configuration Single | ||
Product Type Switching Diode | ||
Maximum Forward Current If 23.4A | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Power Dissipation Pd 160mW | ||
Peak Non-Repetitive Forward Surge Current Ifsm 763A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 10.41mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
The ON Semiconductor silicon carbide (Sic) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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