Renesas Electronics SRAM- 1 MB
- RS Stock No.:
- 264-1295
- Mfr. Part No.:
- 71V016SA12PHG8
- Brand:
- Renesas Electronics
Subtotal (1 reel of 1500 units)*
£2,683.50
(exc. VAT)
£3,220.50
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 24 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | £1.789 | £2,683.50 |
*price indicative
- RS Stock No.:
- 264-1295
- Mfr. Part No.:
- 71V016SA12PHG8
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 64k x 16 | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 20ns | |
| Minimum Supply Voltage | 3V | |
| Timing Type | Asynchronous | |
| Maximum Supply Voltage | 3.6V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 48 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | No | |
| Width | 10.16 mm | |
| Length | 18.41mm | |
| Series | IDT71V016 | |
| Height | 1mm | |
| Supply Current | 170mA | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 64k x 16 | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 20ns | ||
Minimum Supply Voltage 3V | ||
Timing Type Asynchronous | ||
Maximum Supply Voltage 3.6V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Pin Count 48 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals No | ||
Width 10.16 mm | ||
Length 18.41mm | ||
Series IDT71V016 | ||
Height 1mm | ||
Supply Current 170mA | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Renesas Electronics high-speed static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
Low power consumption via chip deselect
Equal access and cycle times
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