Infineon SRAM Memory Chip, CY14B101PA-SFXI- 1Mbit
- RS Stock No.:
- 181-8377P
- Mfr. Part No.:
- CY14B101PA-SFXI
- Brand:
- Infineon
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£8.80
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£10.56
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1 + | £8.80 |
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- RS Stock No.:
- 181-8377P
- Mfr. Part No.:
- CY14B101PA-SFXI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 1Mbit | |
Organisation | 128k x 8 bit | |
Number of Words | 128k | |
Number of Bits per Word | 8bit | |
Maximum Random Access Time | 15ns | |
Clock Frequency | 104MHz | |
Low Power | Yes | |
Timing Type | Synchronous | |
Mounting Type | Surface Mount | |
Package Type | SOIC | |
Pin Count | 16 | |
Dimensions | 10.49 x 7.59 x 2.36mm | |
Maximum Operating Supply Voltage | 2.6 V | |
Height | 2.36mm | |
Minimum Operating Supply Voltage | 2.4 V | |
Length | 10.49mm | |
Width | 7.59mm | |
Maximum Operating Temperature | +85 °C | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128k x 8 bit | ||
Number of Words 128k | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 15ns | ||
Clock Frequency 104MHz | ||
Low Power Yes | ||
Timing Type Synchronous | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 16 | ||
Dimensions 10.49 x 7.59 x 2.36mm | ||
Maximum Operating Supply Voltage 2.6 V | ||
Height 2.36mm | ||
Minimum Operating Supply Voltage 2.4 V | ||
Length 10.49mm | ||
Width 7.59mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
The Cypress CY14X101PA combines a 1-Mbit nv SRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the Quantum Trap technology, creating the worlds most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the Quantum Trap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation).You can also initiate the STORE and RECALL operations through SPI instruction.