Winbond W949D2DBJX5I, SDRAM 512Mbit Surface Mount, 200MHz, 1.7 V to 1.95 V, 90-Pin VFBGA

Bulk discount available

Subtotal (1 pack of 5 units)*

£18.15

(exc. VAT)

£21.80

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5£3.63£18.15
10 - 15£3.52£17.60
20 - 45£3.376£16.88
50 - 95£3.194£15.97
100 +£3.048£15.24

*price indicative

Packaging Options:
RS Stock No.:
188-2651
Mfr. Part No.:
W949D2DBJX5I
Brand:
Winbond
Find similar products by selecting one or more attributes.
Select all

Brand

Winbond

Memory Size

512Mbit

SDRAM Class

LPDDR

Organisation

64M x 8 bit

Data Rate

200MHz

Data Bus Width

32bit

Address Bus Width

15bit

Number of Bits per Word

8bit

Maximum Random Access Time

5ns

Number of Words

64M

Mounting Type

Surface Mount

Package Type

VFBGA

Pin Count

90

Dimensions

13.1 x 8.1 x 0.65mm

Height

0.65mm

Length

13.1mm

Maximum Operating Temperature

+85 °C

Maximum Operating Supply Voltage

1.95 V

Minimum Operating Supply Voltage

1.7 V

Minimum Operating Temperature

-40 °C

Width

8.1mm

VDD = 1.7∼1.95V
VDDQ = 1.7∼1.95V
Data width: x16 / x32
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self Refresh (ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
8K refresh cycles/64 mS
Interface: LVCMOS compatible
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended: -25°C ≤ TCASE ≤ 85°C
Industrial: -40°C ≤ TCASE ≤ 85°C

This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.

Burst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

Related links