Vishay 1200 V 16 A Diode Switching 2-Pin TO-247
- RS Stock No.:
- 918-9843
- Mfr. Part No.:
- VS-HFA16PB120-N3
- Brand:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 918-9843
- Mfr. Part No.:
- VS-HFA16PB120-N3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | VSX | |
| Rectifier Type | Switching | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 20μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Maximum Forward Voltage Vf | 3.93V | |
| Peak Reverse Recovery Time trr | 135ns | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series VSX | ||
Rectifier Type Switching | ||
Pin Count 2 | ||
Peak Reverse Current Ir 20μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Maximum Forward Voltage Vf 3.93V | ||
Peak Reverse Recovery Time trr 135ns | ||
Maximum Operating Temperature 150°C | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Height 20.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
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