Vishay 150V 200A, Diode, 3-Pin TO-240AA VS-VSKCS209/150

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£36.47

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£43.76

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2 - 4£35.38
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RS Stock No.:
873-2351
Mfr. Part No.:
VS-VSKCS209/150
Brand:
Vishay
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Brand

Vishay

Mounting Type

Panel Mount

Package Type

TO-240AA

Maximum Continuous Forward Current

200A

Peak Reverse Repetitive Voltage

150V

Rectifier Type

Recovery Rectifier

Pin Count

3

IGBT Modules, Vishay


Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

The Vishay VS-VSKCS209 Schottky rectifier common cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. The typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection.

Low forward voltage drop
High frequency operation
Low thermal resistance


IGBT Modules, Vishay


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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