Vishay 50V 4A, Schottky Diode, 2-Pin DO-221BC V4PAN50-M3/I
- RS Stock No.:
- 830-6218
- Mfr. Part No.:
- V4PAN50-M3/I
- Brand:
- Vishay
Subtotal (1 pack of 40 units)*
£11.56
(exc. VAT)
£13.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,360 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
40 + | £0.289 | £11.56 |
*price indicative
- RS Stock No.:
- 830-6218
- Mfr. Part No.:
- V4PAN50-M3/I
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Mounting Type | Surface Mount | |
Package Type | DO-221BC | |
Maximum Continuous Forward Current | 4A | |
Peak Reverse Repetitive Voltage | 50V | |
Diode Configuration | Single | |
Rectifier Type | Schottky Rectifier | |
Diode Type | Schottky | |
Pin Count | 2 | |
Maximum Forward Voltage Drop | 590mV | |
Number of Elements per Chip | 1 | |
Diode Technology | Schottky Barrier | |
Peak Non-Repetitive Forward Surge Current | 80A | |
Select all | ||
---|---|---|
Brand Vishay | ||
Mounting Type Surface Mount | ||
Package Type DO-221BC | ||
Maximum Continuous Forward Current 4A | ||
Peak Reverse Repetitive Voltage 50V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Rectifier | ||
Diode Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 590mV | ||
Number of Elements per Chip 1 | ||
Diode Technology Schottky Barrier | ||
Peak Non-Repetitive Forward Surge Current 80A | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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