Vishay 200V 30A, Dual Schottky Diode, 3-Pin TO-220AB V30200C-E3/4W
- RS Stock No.:
- 818-4333
- Mfr. Part No.:
- V30200C-E3/4W
- Brand:
- Vishay
Subtotal (1 pack of 5 units)*
£12.05
(exc. VAT)
£14.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 85 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 + | £2.41 | £12.05 |
*price indicative
- RS Stock No.:
- 818-4333
- Mfr. Part No.:
- V30200C-E3/4W
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Mounting Type | Through Hole | |
Package Type | TO-220AB | |
Maximum Continuous Forward Current | 30A | |
Peak Reverse Repetitive Voltage | 200V | |
Diode Configuration | Common Cathode | |
Rectifier Type | Schottky Rectifier | |
Diode Type | Schottky | |
Pin Count | 3 | |
Maximum Forward Voltage Drop | 1.1V | |
Number of Elements per Chip | 2 | |
Diode Technology | Schottky Barrier | |
Peak Non-Repetitive Forward Surge Current | 250A | |
Select all | ||
---|---|---|
Brand Vishay | ||
Mounting Type Through Hole | ||
Package Type TO-220AB | ||
Maximum Continuous Forward Current 30A | ||
Peak Reverse Repetitive Voltage 200V | ||
Diode Configuration Common Cathode | ||
Rectifier Type Schottky Rectifier | ||
Diode Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Drop 1.1V | ||
Number of Elements per Chip 2 | ||
Diode Technology Schottky Barrier | ||
Peak Non-Repetitive Forward Surge Current 250A | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Features
Schottky Rectifiers, Vishay Semiconductor
Related links
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