Vishay 600V 8A, Silicon Junction Diode, 2-Pin TO-220AC VS-HFA08TB60-N3
- RS Stock No.:
- 541-1001
- Mfr. Part No.:
- VS-HFA08TB60-N3
- Brand:
- Vishay
Subtotal (1 unit)*
£1.17
(exc. VAT)
£1.40
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1 + | £1.17 |
*price indicative
- RS Stock No.:
- 541-1001
- Mfr. Part No.:
- VS-HFA08TB60-N3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Mounting Type | Through Hole | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current | 8A | |
| Peak Reverse Repetitive Voltage | 600V | |
| Diode Configuration | Single | |
| Rectifier Type | Switching | |
| Diode Type | Silicon Junction | |
| Pin Count | 2 | |
| Maximum Forward Voltage Drop | 2.1V | |
| Number of Elements per Chip | 1 | |
| Diode Technology | Silicon Junction | |
| Peak Reverse Recovery Time | 55ns | |
| Priced to Clear | Yes | |
| Peak Non-Repetitive Forward Surge Current | 60A | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Mounting Type Through Hole | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current 8A | ||
Peak Reverse Repetitive Voltage 600V | ||
Diode Configuration Single | ||
Rectifier Type Switching | ||
Diode Type Silicon Junction | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 2.1V | ||
Number of Elements per Chip 1 | ||
Diode Technology Silicon Junction | ||
Peak Reverse Recovery Time 55ns | ||
Priced to Clear Yes | ||
Peak Non-Repetitive Forward Surge Current 60A | ||
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor