STMicroelectronics 1200 V 40 A Rectifier & Schottky Diode Rectifier Diode 3-Pin TO-247
- RS Stock No.:
- 273-5110P
- Mfr. Part No.:
- STPSC40H12CWY
- Brand:
- STMicroelectronics
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Subtotal 2 units (supplied in a tube)*
£24.66
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£29.60
(inc. VAT)
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In Stock
- 300 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 - 4 | £12.33 |
| 5 - 9 | £11.72 |
| 10 - 14 | £11.13 |
| 15 + | £10.57 |
*price indicative
- RS Stock No.:
- 273-5110P
- Mfr. Part No.:
- STPSC40H12CWY
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Dual | |
| Series | STPS | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Operating Temperature | 175°C | |
| Height | 34.95mm | |
| Standards/Approvals | RoHS | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Dual | ||
Series STPS | ||
Rectifier Type Rectifier Diode | ||
Pin Count 3 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Operating Temperature 175°C | ||
Height 34.95mm | ||
Standards/Approvals RoHS | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high-voltage periphery
PPAP capable