Infineon 650V 12A, SiC Schottky Diode, 2-Pin D2PAK IDK12G65C5XTMA2

Subtotal (1 reel of 1000 units)*

£1,880.00

(exc. VAT)

£2,260.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£1.88£1,880.00

*price indicative

RS Stock No.:
273-2743
Mfr. Part No.:
IDK12G65C5XTMA2
Brand:
Infineon
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Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-263

Maximum Continuous Forward Current

12A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Series

IDK12G65C5

Diode Type

SiC Schottky

Pin Count

2

Number of Elements per Chip

1

The Infineon SiC Schottky Diode is a silicon carbide schottky barrier diode. The ThinQ Generation 5 represents Infineon leading edge technology for the SiC schottky barrier diode. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit.

RoHS compliant
Pb free lead plating
High surge current capability
Benchmark switching behaviour
Optimized for high temperature operation
Temperature independent switching behaviour

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