onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A

View this category

Subtotal (1 unit)*

£1.73

(exc. VAT)

£2.08

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 968 unit(s), ready to ship
Units
Per unit
1 +£1.73

*price indicative

Packaging Options:

Alternative

This product is not currently available. Here is our alternative recommendation.

presentation
onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A
RS Stock No.
178-4262

Each (On a Reel of 2500)

£1.724

(exc. VAT)

£2.069

(inc. VAT)

RS Stock No.:
178-4651
Mfr. Part No.:
FFSD08120A
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Mounting Type

Surface Mount

Package Type

TO-252

Maximum Continuous Forward Current

22.5A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

3

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

530A

COO (Country of Origin):
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding

Related links